Continental Device India BCW61A
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BCW61A |
|---|---|
| Datasheet | BCW61A Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f: 100 MHz –VCE = 5 V; –IC = 10 mA Noise figure at f = 1 kHz –VCE = 5 V; –IC = 200 mA –VCES –VCEO –IC Ptot Tj max. max. max. max. max. 32 V 32 V 200 mA 250 mW 150 °C fT typ. 180 MHz F typ. 2 dB Continental Device India Limited Data Sheet Page 1 of 3 BCW61A BCW61B BCW61C BCW61D RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature –VCES –VCE0 –VEB0 –IC –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA max. 250 mW –55 to +150 °C max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j–a = 500 K/W CHARACTERISTICS Tamb = 25 °C unless...
