Infineon Technologies BCX54
NPN Silicon AF Transistors
MAXIMUM RATINGS
Parameter Collector-emitter voltage BCX54 BCX55 BCX56 Symbol VCEO Value 45 60 80 Collector-base voltage BCX54 BCX55 BCX56 VCBO 45 60 100 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C VEBO IC ICM IB IBM Ptot 5 1 1.5 100 200 2 Junction temperature Tj 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit - V A mA W °C Unit K/W 2 2011-09-19 BCX54 ...- BCX56...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCX54 IC = 10 mA, IB = 0 , BCX55 IC = 10 mA, IB = 0 , BCX56 V(BR)CEO 45 60 80 - - Unit V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCX54 IC = 100 µA, IE = 0 , BCX55...