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BFP840ESD - Robust Low Noise Silicon Germanium Bipolar RF Transistor

Datasheet Summary

Description

updated.

Features

  • . . 8 3 Maximum Ratings.
  • . . . . 9 4 Thermal Characteristics.
  • . . . 10 5 Electrical Characteristics.

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Datasheet Details

Part number BFP840ESD
Manufacturer Infineon
File Size 1.11 MB
Description Robust Low Noise Silicon Germanium Bipolar RF Transistor
Datasheet download datasheet BFP840ESD Datasheet
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Full PDF Text Transcription

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BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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