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BFP842ESD
SiGe:C NPN RF bipolar transistor
Product description
The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.
Feature list
• Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness
• High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies:
NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
• High gain Gma = 17.5 dB at 3.5 GHz, 2.5 V, 15 mA
• OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
•
Suitable for low voltage collector resistor)
applications
e.g.
VCC
=
1.2
V
and
1.8
V
(2.85
V,
3.3
V,
3.
BFP842ESD Datasheet
