• Part: BFP842ESD
  • Description: NPN RF bipolar transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 526.93 KB
BFP842ESD Datasheet (PDF) Download
Infineon
BFP842ESD

Key Features

  • Unique bination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness
  • High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies
  • High gain Gma = 17.5 dB at 3.5 GHz, 2.5 V, 15 mA
  • Suitable for low voltage collector resistor)

Applications

  • Wireless munications: WLAN, WiMAX and Bluetooth