Infineon Technologies BFR106
Low Noise Silicon Bipolar RF Transistor
| Part No. | BFR106 |
|---|---|
| Datasheet | BFR106 Download |
| Manufacturer |  Infineon Technologies |
| Description | Low Noise Silicon Bipolar RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage, TA = 25°C TA = -55°C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 76 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 16 15 20 20 3 210 21 700 150 -55 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 105 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2013-11-21 BFR106ELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - Collector-emitter cutoff current VCE = 20 V, VBE = 0 VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE =...
