Infineon Technologies BFR949F
NPN Silicon RF Transistor
| Part No. | BFR949F |
|---|---|
| Datasheet | BFR949F Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 93°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) Marking RKs Pin Configuration 1=B 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS 3=C Package TSFP-3 Unit V Value 10 20 20 1.5 35 4 250 150 -65 ... 150 -65 ... 150 mA mW °C Value 225 Unit K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jan-04-2002 BFR949FELECTRICAL CHARACTERISTICS
Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 , VBE = 0 V Collector -base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 10 V Symbol min.
