Infineon Technologies BFR949T
NPN Silicon RF Transistor
| Part No. | BFR949T |
|---|---|
| Datasheet | BFR949T Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking RKs 1=B Pin Configuration 2=E 3=C Package SC75 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 10 20 20 1.5 70 7 250 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 75°C 1) Junction temperature Ambient temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 2) RthJS 300 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Oct-24-2001 BFR949TELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Base-emitter forward voltage IE = 25mA Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 µA ICBO 100 nA VBEF 1.05 V(BR)CEO 10 V Symbol min.
