Infineon Technologies BFS17S
NPN Silicon RF Transistor
| Part No. | BFS17S |
|---|---|
| Datasheet | BFS17S Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature Storage temperature VCEO VCBO VEBO IC ICM Ptot TJ TA TStg Value 15 25 2.5 25 50 280 150 -65 ... 150 -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS ≤ 240 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-07-20 BFS17SELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 2...
