Siemens BFS17S
NPN Silicon RF Transistor
| Part No. | BFS17S |
|---|---|
| Datasheet | BFS17S Download |
| Manufacturer |  Siemens |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
of any single Transistor Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Symbol Values 15 25 2.5 25 50 mA Unit V VCEO VCBO VEBO IC ICM Ptot f ≥ 10 MHz Total power dissipation mW 280 150 - 65 + 150 - 65 ... + 150 ≤ 240 °C TS ≤ 83 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Tj TA Tstg RthJS K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Dec-18-1996 BFS 17SELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics of any single Transistor Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 70 0.1 - V µA 0.05 10 100 20 20 150 V 0.4 IC = 1 mA, IB = 0 Collector-base cutoff current ICBO VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current IEBO - VEB = 2.5 V, IC = 0 DC current gain hFE IC = 2 mA, VCE = 1 V IC = 25 mA, VCE...
