Infineon Technologies BFT92
PNP Silicon RF Transistor
| Part No. | BFT92 |
|---|---|
| Datasheet | BFT92 Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter W1s 1=B 2=E 3=C SOT23 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 78 °C 1) Junction temperature Ambient temperature Storage temperature Thermal Resistance 15 20 20 2 25 3 200 150 -65 ... 150 -65 ... 150 V mA mW °C Junction - soldering point 2) RthJS 360 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-16-2001 BFT92ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 15 50 IEBO 10 ICBO 100 V(BR)CEO 15 typ. max. Unit V nA µA - 2 Jul-16-2001 BFT92ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified.
