NXP Semiconductors BFT92
The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.| Part No. | BFT92 |
|---|---|
| Datasheet | BFT92 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP 5GHz wideband transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High power gain● Low intermodulation distortion 1.3
APPLICATIONS
● Oscilloscopes and spectrum analyzers● Radar systems
● RF wideband amplifiers 1.4 Quick reference data Table 1. Symbol VCBO VCEO IC Ptot fT Cre GUM NF Quick reference data Parameter collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance maximum unilateral power gain noise figure dim intermodulation distortion Conditions open emitter open base up to Ts = 95 C IC = 14 mA; VCE = 10 V; f = 500 MHz IC = 2 mA; VCE = 10 V; f = 1 MHz IC = 14 mA; VCE = 10 V; f = 500 MHz Tamb = 25 C; IC = 5 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 14 mA; VCE = 10 V; RL = 75 ; Vo = 150 mV; Tamb = 25 C; f(p + q-r) = 493.25 MHz [1] Ts is the temperature at the soldering point of the collector tab. Min Typ Max Unit - - 20 V - - 15 V - - 25 mA [1] - - 300 mW - 5 - GHz - 0.7 - pF - 18 - dB - 2.5 - dB - 60 - dB NXP Semiconductors BFT92 PNP 5 GHz wideband transistor 2.
