BSB008NE2LX
Overview
- Optimizedfore-fuseandOR-ingapplication
- UltralowRdsoninCanPAK-MXfootprint
- Lowprofile(<0.7mm)
- 100%avalanchetested
- 100%RgTested
- Double-sidedcooling
- CompatiblewithDirectFET®packageMXfootprintandoutline1)
- QualifiedaccordingtoJEDEC2)fortargetapplications CanPAKMX-size Drain Drain Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max
- 8 mΩ ID 180 A Qoss 74 nC Qg(0V..10V) 258 nC Gate Source Type/OrderingCode BSB008NE2LX Package MG-WDSON-2 Marking 04E2 RelatedLinks - 1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation. 2) J-
