Datasheet Summary
BSB012N03LX3 G
OptiMOSTM3 Power-MOSFET
Features
- Optimized for high switching frequency DC/DC converter
- Very low on-resistance R DS(on)
- Excellent gate charge x R DS(on) product (FOM)
- Low parasitic inductance
- Low profile (<0.7 mm)
- 100% avalanche tested
- 100% Rg Tested
- Double-sided cooling
- Pb-free plating; RoHS pliant
Product Summary V DS R DS(on),max ID 30 1.2 180 MG-WDSON-2 V mΩ A
- patible with DirectFET® package MX footprint and outline 1)
- Qualified according to JEDEC2) for target applications Type BSB012N03LX3 G Package MG-WDSON-2 Outline MX Marking 0103
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol...