BSB012N03LX3G Description
BSB012N03LX3 G OptiMOSTM3 Power-MOSFET.
BSB012N03LX3G Key Features
- Optimized for high switching frequency DC/DC converter
- Very low on-resistance R DS(on)
- Excellent gate charge x R DS(on) product (FOM)
- Low parasitic inductance
- Low profile (<0.7 mm)
- 100% avalanche tested
- 100% Rg Tested
- Double-sided cooling
- Pb-free plating; RoHS pliant
- patible with DirectFET® package MX footprint and outline 1)