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BSB017N03LX3 Datasheet n-Channel Power MOSFET

Manufacturer: Infineon

Download the BSB017N03LX3 datasheet PDF. This datasheet also includes the BSB017N03LX3G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BSB017N03LX3G_Infineon.pdf) that lists specifications for multiple related part numbers.

General Description

OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions.

Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications.

Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in.

Overview

n-Channel Power MOSFET OptiMOS™ BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB017N03LX3 G.

Key Features

  • Optimized for high switching frequency DC/DC converter.
  • 100% avalanche tested.
  • Very low on-resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Qualified according to JEDEC1) for target.

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