BSB019N03LXG Description
BSB019N03LX G OptiMOSTM2 Power-MOSFET.
BSB019N03LXG Key Features
- Pb-free plating; RoHS pliant
- Dual sided cooling
- Low profile (<0.7 mm)
- Avalanche rated
- Qualified for consumer level application
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Optimized for high switching frequency DC/DC converter
- Low parasitic inductance
- patible with DirectFET® package MX footprint and outline 1)