Datasheet Summary
BSB044N08NN3 G
OptiMOS™3 Power-MOSFET
Features
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- Dual sided cooling
- low parasitic inductance
Product Summary VDS RDS(on),max ID
80 4.4 90
CanPAKTM M MG-WDSON-2
- Low profile (<0.7mm)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- patible with DirectFET® package MN footprint and outline2)
V mW A
Type BSB044N08NN3 G
Package MG-WDSON-2
Outline MN
Marking 0208
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continu...