Datasheet4U Logo Datasheet4U.com

BSC011N03LS - Power MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Optimized for high performance buck converter.
  • 175°C rated.
  • Very low on‑resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N‑channel.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSC014N03LS N-Channel 30V MOSFET VBsemi
BSC014N06NS Power-Transistor Infineon Technologies
BSC016N03LSG Power-Transistor Infineon Technologies
BSC016N04LSG MOSFET Infineon Technologies
BSC017N04NSG Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
BSC011N03LSI Power MOSFET
BSC010N04LS Power MOSFET
BSC010N04LS6 40V MOSFET
BSC010N04LSC 40V MOSFET
BSC010N04LSI 40V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Public BSC011N03LS Final datasheet MOSFET OptiMOS™ Power‑MOSFET, 30 V Features • Optimized for high performance buck converter • 175°C rated • Very low on‑resistance RDS(on) @ VGS=4.5 V • 100% avalanche tested • Superior thermal resistance • N‑channel • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID QOSS QG(0V..10V) Key Performance Parameters Value Unit 30 V 1.1 mΩ 240 A 40 nC 72 nC Type/Ordering Code BSC011N03LS Package PG‑TDSON‑8 PG‑TDSON‑8 8765 5678 1 234 4 32 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Marking 011N03LS Related Links ‑ Datasheet https://www.infineon.