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BSC011N03LSI - Power MOSFET

General Description

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Key Features

  • Optimized for high performance SMPS.
  • Integrated monolithic Schottky-like diode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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BSC011N03LSI MOSFET OptiMOSTMPower-MOSFET,30V Features •OptimizedforhighperformanceSMPS •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 1.1 mΩ ID 230 A QOSS 45 nC QG(0V..