Datasheet Summary
OptiMOSTM3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- Superior thermal resistance
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Type
BSC047N08NS3 G
BSC047N08NS3 G
Product Summary VDS RDS(on),max ID
80 V 4.7 mΩ 100 A
Package
PG-TDSON-8
Marking
047N08NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T...