BSC080N03MSG
BSC080N03MSG is Power-Transistor manufactured by Infineon.
BSC080N03MS G
Opti MOS™3 M-Series Power-MOSFET
Features
- Optimized for 5V driver application (Notebook, VGA, POL)
- Low FOMSW for High Frequency SMPS
- 100% avalanche tested
- N-channel
- Very low on-resistance R DS(on) @ V GS=4.5 V
- Excellent gate charge x R DS(on) product (FOM)
- Qualified according to JEDEC1) for target applications
- Superior thermal resistance
- Pb-free plating; Ro HS pliant
- Halogen-free according to IEC61249-2-21
Product Summary
V DS R DS(on),max
30 V
V GS=10 V V GS=4.5 V
8 mΩ 10.2 53 A
PG-TDSON-8
Type BSC080N03MS G
Package PG-TDSON-8
Marking 080N03MS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
V GS=4.5 V, T A=25 °C, R th JA=50...
