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Dual N-Channel OptiMOS™ MOSFET
Features
Product Summary
• Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.5V rated)
VDS RDS(on),max
• 100% avalanche tested ID
• Qualified according to JEDEC1) for target applications
VGS=10 V VGS=4.5 V
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
VPhase
• Integrated monolithic Schottky-like diode
BSC0910NDI
Q1 Q2 25 25 V 4.6 1.2 mW 5.9 1.6 40 40 A
Type BSC0910NDI
Package PG-TISON-8
Marking 0910NDI
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Parameter
Symbol Conditions
Continuous drain current
I D T C=70 °C, V GS=10 V T A=25 °C, V GS=4.
BSC0910NDI Datasheet
