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Dual N-Channel OptiMOS™ MOSFET
Features
Product Summary
• Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.5V rated)
VDS RDS(on),max
• N-channel ID
• Qualified according to JEDEC1) for target applications
VGS=10 V VGS=4.5 V
• Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
VPhase
BSC0911ND
Q1 Q2 25 25 V 3.2 1.2 mW 4.8 1.7 40 40 A
Type BSC0911ND
Package PG-TISON-8
Marking 0911ND
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current5) Avalanche energy, single pulse Gate source voltage Power dissipation
ID
I D,pulse E AS V GS P tot
T C=70 °C, V GS=10 V
T A=25 °C, V GS=4.5 V3) T A=70 °C, V GS=4.5 V3) T A=25 °C, V GS=4.
BSC0911ND Datasheet
