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Dual N-Channel OptiMOS™ MOSFET
Features
Product Summary
• Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter
VDS
• Logic level (4.5V rated)
RDS(on),max
VGS=10 V
• 100% avalanche tested ID
• Qualified according to JEDEC1) for target applications
VGS=4.5 V
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
VPhase
BSC0923NDI
Q1 Q2 30 30 V 5 2.8 mW 7 3.7 40 40 A
Type BSC0923NDI
Package PG-TISON-8
Marking 0923NDI
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Parameter Continuous drain current
Pulsed drain current5) Avalanche energy, single pulse Gate source voltage Power dissipation
Symbol Conditions
ID
I D,pulse E AS V GS P tot
T C=70 °C, VGS=10V T A=25 °C, VGS=4.5V3) T A=70 °C, VGS=4.
BSC0923NDI Datasheet
