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BSC0925ND - Power-MOSFET

Datasheet Summary

Features

  • Dual N-channel OptiMOS™ MOSFET.
  • Optimized for clean switching.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • Optimized for high performance Buck converter.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – BSC0925ND

Datasheet Details

Part number BSC0925ND
Manufacturer Infineon
File Size 564.89 KB
Description Power-MOSFET
Datasheet download datasheet BSC0925ND Datasheet
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Full PDF Text Transcription

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OptiMOSTM Power-MOSFET Features • Dual N-channel OptiMOS™ MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance • Optimized for high performance Buck converter • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC0925ND Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 30 5 40 8.6 13 V mW A nC nC VPhase Type BSC0925ND Package PG-TISON-8 Marking 0925ND Maximum ratings, at T j=25 °C, unless otherwise specified2) Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 40 A V GS=4.5 V, T A=25 °C3) 15 V GS=4.
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