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OptiMOSTM Power-MOSFET
Features • Dual N-channel OptiMOS™ MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance • Optimized for high performance Buck converter • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
BSC0925ND
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
30 5 40 8.6 13
V mW A nC nC
VPhase
Type BSC0925ND
Package PG-TISON-8
Marking 0925ND
Maximum ratings, at T j=25 °C, unless otherwise specified2)
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
40 A
V GS=4.5 V, T A=25 °C3)
15
V GS=4.