BSC093N15NS5SC
Description
inal Data Sheet 2 Rev.2.1,2022-10-07 OptiMOSTM5Power-Transistor,150V BSC093N15NS5SC 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min.
Key Features
- Dual-sidecooledpackagewithlowestjunction-topthermalresistance
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- Verylowreverserecoverycharge(Qrr)
- 175°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- Idealforhigh-frequencyswitchingandsynchronousrectification
