Datasheet4U Logo Datasheet4U.com

BSC093N15NS5SC - MOSFET

General Description

.

.

.

.

Key Features

  • Dual-side cooled package with lowest junction-top thermal resistance.
  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Very low reverse recovery charge (Qrr).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Ideal for high-frequency switching and synchronous rectification Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSC093N04LSG Power-MOSFET Infineon Technologies
BSC0901NS N-Channel Power MOSFET Infineon Technologies
BSC0901NSI n-Channel Power MOSFET Infineon Technologies
BSC0902NS 30V MOSFET Infineon Technologies
BSC0904NSI 30V Power MOSFET Infineon Technologies

Other Datasheets by Infineon

Part Number Description
BSC093N15NS5 150V MOSFET
BSC0902NSI MOSFET
BSC0906NS 30V MOSFET
BSC0910NDI Dual N-Channel OptiMOS MOSFET
BSC0911ND Dual N-Channel OptiMOS MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSC093N15NS5SC MOSFET OptiMOSTM5Power-Transistor,150V Features •Dual-sidecooledpackagewithlowestjunction-topthermalresistance •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Idealforhigh-frequencyswitchingandsynchronousrectification Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 9.