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BSC093N15NS5 - 150V MOSFET

General Description

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Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Very low reverse recovery charge (Qrr).
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC093N15NS5 MOSFET OptiMOSTM5Power-Transistor,150V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 9.3 mΩ ID 87 A Qrr 58 nC PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC093N15NS5 Package PG-TDSON-8 Marking 093N15NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.