Datasheet Summary
MOSFET
OptiMOSTM5Power-Transistor,150V
Features
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- Verylowreverserecoverycharge(Qrr)
- 150°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
9.3 mΩ
Qrr
58 nC
PG-TDSON-8
8 7 6 5
5 6 7 8
Pin 1
2 3
4 3
2 1
Drain Pin 5-8
Gate
- 1
Pin...