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BSC100N03LSG - Power-Transistor

Datasheet Summary

Features

  • Fast switching MOSFET for SMPS.
  • Optimized technology for DC/DC converters.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – BSC100N03LSG

Datasheet Details

Part number BSC100N03LSG
Manufacturer Infineon
File Size 381.36 KB
Description Power-Transistor
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BSC100N03LS G OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 30 V 10 mΩ 44 A PG-TDSON-8 Type BSC100N03LS G Package PG-TDSON-8 Marking 100N03LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 44 A 28 Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, s
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