BSC12DN20NS3G
BSC12DN20NS3G is Power MOSFET manufactured by Infineon.
Type
Opti MOSTM3 Power-Transistor
Features
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
BSC12DN20NS3 G
Product Summary VDS RDS(on),max ID
200 V 125 mΩ 11.3 A
PG-TDSON-8
Type BSC12DN20NS3 G
Package PG-TDSON-8
Marking 12DN20NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt
I D,pulse E AS dv /dt
T C=25 °C T C=100 °C T C=25 °C I D=5.7 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T...
