Infineon Technologies BSC340N08NS3G
Power-Transistor
| Part No. | BSC340N08NS3G |
|---|---|
| Datasheet | BSC340N08NS3G Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Ideal for high frequency switching● Optimized technology for DC/DC converters
● Excellent gate charge x R DS(on) product (FOM)
● Superior thermal resistance
● N-channel, normal level
● 100% avalanche tested
● Pb-free plating; RoHS compliant
● Qualified according to JEDEC1) for target applications
● Halogen-free according to IEC61249-2-21 Type BSC340N08NS3 G BSC340N08NS3 G Product Summary V DS R DS(on),max ID 80 V 34 mΩ 23 A Package Marking PG-TDSON-8 340N08NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Value Unit 23 A 15 V GS=10 V, T A=25 °C, R thJA=50 K/W2) 7 Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage I D,pulse E AS V GS T C=25 °C I D=12 A, R GS=25 Ω 92 20 mJ ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
