Datasheet Summary
BSF050N03LQ3 G
OptiMOSTM3 Power-MOSFET
Features
- Optimized for high switching frequency DC/DC converter
- Very low on-resistance R DS(on)
- Excellent gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID
30 5 60
- Low parasitic inductance
- Low profile (<0.7 mm)
- 100% avalanche tested
CanPAKTM S MG-WDSON-2
- 100% Rg Tested
- Double-sided cooling
- Pb-free plating; RoHS pliant
- patible with DirectFET® package SQ footprint and outline 1)
- Qualified according to JEDEC2) for target applications
V mΩ A
Type BSF050N03LQ3 G
Package MG-WDSON-2
Outline SQ
Marking 1303
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol...