Datasheet Summary
BSF083N03LQ G
OptiMOSTM2 Power-MOSFET
Features
- Optimized for high switching frequency DC/DC converter
- Very low on-resistance R DS(on)
- Excellent gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID
30 8.3 53
- Low profile (<0.7 mm)
- Double-sided cooling
- Low parasitic inductance
MG-WDSON-2
- 100% avalanche tested
- Qualified for consumer level application
- patible with DirectFET® package SQ footprint and outline 1)
- Pb-free plating; RoHS pliant
V mΩ A
Type BSF083N03LQ G
Package MG-WDSON-2
Outline SQ
Marking 6003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain...