Datasheet Summary
OptiMOSTM Power-MOSFET
Features
- Optimized for high performance Buck converter
- Very low parasitic inductance
- Low profile (<0.5 mm)
- Double side cooling
- N-channel
- 100% avalanche tested
- Very low on-resistance R DS(on) @ V GS=4.5 V
- Pb-free lead plating; RoHS pliant
- Halogen-free according to IEC61249-2-21
- Qualified according to JEDEC1) for target applications
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
25 V 1.1 mW 50 A 32 nC 54 nC
LG-USON-6-1
Type BSN011NE2LS
Package LG-USON-6-1
Marking 011NE2L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current3) Avalanche...