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OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
BSN012N03LSI
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
30 V 1.2 mW 50 A 33 nC 56 nC
LG-USON-6-1
Type BSN012N03LSI
Package LG-USON-6-1
Marking 012N03LI
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C
50 A 50 50
V GS=4.
BSN012N03LSI Datasheet
