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BSN012N03LSI - Power-MOSFET

Key Features

  • Optimized for high performance Buck converter.
  • Monolithic integrated Schottky like diode.
  • Very low on-resistance R DS(on) @ V GS=4.5 V.
  • 100% avalanche tested.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSN012N03LSI Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 30 V 1.2 mW 50 A 33 nC 56 nC LG-USON-6-1 Type BSN012N03LSI Package LG-USON-6-1 Marking 012N03LI Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C 50 A 50 50 V GS=4.