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BSO612CVG - Small-Signal-Transistor

This page provides the datasheet information for the BSO612CVG, a member of the BSO612CV Small-Signal-Transistor family.

Datasheet Summary

Features

  • Dual N- and P -Channel.
  • Enhancement mode.
  • Avalanche rated Drain source voltage Drain-Source on-state resistance Continuous drain current.
  • Pb-free lead plating;RoHS compliant VDS RDS(on) ID N 60 0.12 3 P -60 V 0.3 W -2 A Type Package Marking BSO 612 CV PG-DSO-8 612CV Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Avalanche energy, single pulse WID = 3 A, VD.

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Datasheet preview – BSO612CVG

Datasheet Details

Part number BSO612CVG
Manufacturer Infineon
File Size 384.49 KB
Description Small-Signal-Transistor
Datasheet download datasheet BSO612CVG Datasheet
Additional preview pages of the BSO612CVG datasheet.

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Full PDF Text Transcription

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Rev. 2.1 BSO 612 CV G SIPMOS® Small-Signal-Transistor Product Summary Features · Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage Drain-Source on-state resistance Continuous drain current · Pb-free lead plating;RoHS compliant VDS RDS(on) ID N 60 0.12 3 P -60 V 0.
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