Infineon Technologies BSP125
Power Transistor
| Part No. | BSP125 |
|---|---|
| Datasheet | BSP125 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Continuous drain current TA=25°C TA=70°C ID 0.12 0.1 Pulsed drain current TA=25°C Reverse diode dv/dt ID puls dv/dt 0.48 6 IS=0.12A, VDS=480V, di/dt=200A/µs, Tjmax=175°C Gate source voltage ESD Class (JESD22-A114-HBM) VGS ±20 1A (>250V, <500V) Power dissipation TA=25°C, TA=25 Operating and storage temperature IEC climatic category; DIN IEC 68-1 Ptot Tj , Tstg 1.8 -55... +150 55/150/56 Unit A kV/µs V W °C Page 1 2012-11-27 Rev. 2.2 BSP125 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol Values Unit min. typ. max. RthJS - - 25 K/W RthJA - - 115 - - 70ELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - -V VGS=0, ID=0.25mA Gate threshold voltage, VGS...
