BSP125 Datasheet PDF

MAXIMUM RATINGS

Parameter Drain source voltage Drain-gate voltage Symbol Values 600 600 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.12 TA = 39 °C DC drain current, pulsed IDpuls 0.48 TA = 25 °C Power dissipation Ptot 1.7 W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 125

MAXIMUM RATINGS

Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

ELECTRICAL CHARACTERISTICS

, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 600 2 10 8 10 30 2.5 100 50...