The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PNP Silicon Darlington Transistor
• High collector current • Low collector-emitter saturation voltage • Complementary types: BSP50...BSP52 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BSP60-BSP62
4
3
2
1
Type BSP60 BSP61 BSP62
Marking
Pin Configuration
BSP60 1=B 2=C 3=E 4=C -
-
BSP61 1=B 2=C 3=E 4=C -
-
BSP62 1=B 2=C 3=E 4=C -
-
Package SOT223 SOT223 SOT223
Maximum Ratings Parameter Collector-emitter voltage BSP60 BSP61 BSP62
Collector-base voltage BSP60 BSP61 BSP62
Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Total power dissipationTS ≤ 124 °C Junction temperature Storage temperature
Symbol VCEO
VCBO
VEBO IC ICM IB Ptot Tj Tstg
Value
Unit
V
45
60
80
60
80 90
5
1
A
2
100
mA
1.