Infineon Technologies BSP613P
Small-Signal-Transistor
| Part No. | BSP613P |
|---|---|
| Datasheet | BSP613P Download |
| Manufacturer |  Infineon Technologies |
| Description | Small-Signal-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TA=25°C TA=70°C Pulsed drain current TA=25°C Avalanche energy, single pulse ID=2.9 A , VDD=-25V, RGS=25Ω ID puls EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS=2.9A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg ESD Class JESD22-A114-HBM Value -2.9 -2.3 -11.6 150 0.18 6 ±20 1.8 -55... +150 55/150/56 Class 1c Unit A mJ kV/µs V W °C Rev.2.8 Page 1 2016-05-30 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP613P Symbol Values Unit min. typ. max. RthJS RthJA RthJA - - 19 K/W - 100 - - - 100 - - 70ELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max.
