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BSP613P - Small-Signal-Transistor

Key Features

  • P-Channel Enhancement mode Avalanche rated dv/dt rated Ideal for fast switching buck converter SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 1 2 3 2.9 4.6 0.70+0.1 -0.1 0.90+0.2 -0.2 7.00+0.3 -0.3 1 Gate 2 Drain 3 Source 4 Drain Absolute Maximum Ratings Ta = 25 Parameter Continuous drain current TA=25 Pulsed drain current TA=25 Avalanche energy, single pulse.
  • 1 Avalanche energy, periodic limited by Tjmax Reverse diode dv /dt.
  • 2 Gate source voltage Power dissipat.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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0.1max +0.05 0.90 -0.05 +0.15 1.65 -0.15 SMD Type SIPMOS Small-Signal-Transistor BSP613P MOS FICET Features P-Channel Enhancement mode Avalanche rated dv/dt rated Ideal for fast switching buck converter SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 1 2 3 2.9 4.6 0.70+0.1 -0.1 0.90+0.2 -0.2 7.00+0.3 -0.3 1 Gate 2 Drain 3 Source 4 Drain Absolute Maximum Ratings Ta = 25 Parameter Continuous drain current TA=25 Pulsed drain current TA=25 Avalanche energy, single pulse *1 Avalanche energy, periodic limited by Tjmax Reverse diode dv /dt *2 Gate source voltage Power dissipation Operating and storage temperature Thermal resistance,junction - soldering point Operating and storage temperature *1 ID=-2.9A,VDS=-25 V, RGS=25 *2 Is=2.