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BSZ011NE2LS5I - 25V MOSFET

General Description

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Key Features

  • Optimized for high performance buck converters.
  • Monolithic integrated Schottky-like diode.
  • Very low on-resistance RDS(on) @ VGS=4.5V.
  • 100% avalanche tested.
  • N-channel.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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BSZ011NE2LS5I MOSFET OptiMOSTM5Power-Transistor,25V Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 1.1 mΩ ID 202 A Qoss 29 nC QG(0V..4.5V) 17 nC TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ011NE2LS5I Package PG-TSDSON-8 FL Marking 11NE25I RelatedLinks - Final Data Sheet 1 Rev.2.