BSZ014NE2LS5IF - MOSFET

Infineon

Key Features

Optimized for synchronous rectification.
Monolithic integrated Schottky like diode.
Very low on-resistance RDS(on) @ VGS=4.5 V.
Excellent gate charge x RDS(on) product (FOM).
100% avalanche tested.
N-channel.
Qualified according to JEDEC1) for target.

BSZ014NE2LS5IF mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	BSZ014NE2LS5IF
Manufacturer	Infineon
File Size	1.56 MB
Description	MOSFET
Datasheet	BSZ014NE2LS5IF Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,25V BSZ014NE2LS5IF DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features •Optimizedforsynchronousrectification •MonolithicintegratedSchottkylikediode •Verylowon-resistanceRDS(on)@VGS=4.5V •ExcellentgatechargexRDS(on)product(FOM) •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 1.45 mΩ ID 40 A QOSS 26 nC QG(0V..4.