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BSZ028N04LS - MOSFET

Description

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Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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BSZ028N04LS MOSFET OptiMOSTMPower-MOSFET,40V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilitywithenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 2.8 mΩ ID 40 A QOSS 28 nC QG(0V..10V) 32 nC TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ028N04LS Package PG-TSDSON-8 FL Marking 028N04L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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