Datasheet Summary
Type
BSZ076N06NS3 G
OptiMOSTM3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21 Type BSZ076N06NS3 G
Product Summary V DS R DS(on),max ID 60 7.6 20 V mΩ A
Package Marking
PG-TSDSON-8 076N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2) V GS=10 V, T C=100 °C V...