BSZ086P03NS3EG Datasheet | Infineon

BSZ086P03NS3E G Opti MOSTM P3 Power-Transistor Features - single P-Channel in S3O8 - Qualified according JEDEC 1) for target applications - 150 °C operating temperature - V GS=25 V, specially suited for notebook applications - Pb-free; Ro HS pliant - ESD protected - applications: battery management, load switching - Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 8.6 -40 PG-TSDSON-8 V mΩ A Type BSZ086P03NS3E G Package PG-TSDSON-8 Marking 086P3N Lead free Yes Halogen free Yes Packing non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation I D,pulse E AS V GS P tot T A=25 °C T A=25 °C2) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 1) Value -40 -40 -13.5 -160 105 ±25 69 2.1 -55 … 150 Unit A T C=25 °C3) I D=-20 A, R GS=25 Ω m J V W T j, T stg JESD22-A114 HBM °C 3 (>= 4 k V) 260 55/150/56 °C J-STD20 and JESD22 Rev. 2.02 page 1 2009-11-16 Free Datasheet...