BSZ088N03LSG Datasheet | Infineon

BSZ088N03LS G Opti MOS™3 Power-MOSFET Features - Fast switching MOSFET for SMPS - Optimized technology for DC/DC converters - Qualified according to JEDEC1) for target applications - N-channel; Logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Superior thermal resistance - Avalanche rated - Pb-free plating; Ro HS pliant - Halogen-free according to IEC61249-2-21 Type BSZ088N03LS G Package PG-TSDSON-8 Marking 088N03L Product Summary V DS R DS(on),max ID 30 8.8 40 PG-TSDSON-8 V mΩ A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R th JA=60 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 40 32 40 26 Unit A 12 160 20 25 6 ±20 m J k V/µs V I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=20 A, R GS=25 Ω I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C J-STD20 and JESD22 Rev. 2.0 page 1 2010-03-18 Free Datasheet http://../ BSZ088N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R th JA=60 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 35 2.1 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions min. Values typ....