Datasheet Summary
BSZ097N04LS G
OptiMOS™3 Power-Transistor
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC1) for target applications
- N-channel; Logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Superior thermal resistance
- 100% Avalanche tested
- Pb-free plating; RoHS pliant
- Halogen-free according to IEC61249-2-21 Type BSZ097N04LS G Package PG-TSDSON-8 Marking 097N04L
Product Summary V DS R DS(on),max ID 40 9.7 40 PG-TSDSON-8 V mΩ A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T...