• Part: BSZ120P03NS3EG
  • Description: Power MOSFET
  • Manufacturer: Infineon
  • Size: 321.83 KB
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Datasheet Summary

BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Features - single P-Channel in S3O8 - Qualified according JEDEC 1) for target applications - 150 °C operating temperature - V GS=25 V, specially suited for notebook applications - Pb-free; RoHS pliant - ESD protected - applications: battery management, load switching - Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 12 -40 V mΩ A PG-TSDSON-8 Type BSZ120P03NS3E G Package PG-TSDSON-8 Marking 120P3NE Lead free Yes Halogen free Yes Packing non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C2) Pulsed drain...