• Part: BSZ150N10LS3G
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 428.78 KB
Download BSZ150N10LS3G Datasheet PDF
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Datasheet Summary

OptiMOSTM3 Power-Transistor Features - Ideal for high frequency switching - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - N-channel, Logic level - 100% avalanche tested - Pb-free plating; RoHS pliant - Qualified according to JEDEC1) for target applications - Halogen-free according to IEC61249-2-21 BSZ150N10LS3 G Product Summary VDS RDS(on),max ID 100 V 15 mW 40 A PG-TSDSON-8 Type BSZ150N10LS3 G Package Marking PG-TSDSON-8 150N10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Value 40 30 Unit A V GS=10 V, T A=25...