BSZ160N10NS3G Datasheet | Infineon

BSZ160N10NS3 G Opti MOSTM3 Power-Transistor Features - Ideal for high frequency switching - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - N-channel, normal level - 100% avalanche tested - Pb-free plating; Ro HS pliant - Qualified according to JEDEC1) for target applications - Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 100 16 40 PG-TSDSON-8 V mΩ A Type BSZ160N10NS3 G Package PG-TSDSON-8 Marking 160N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R th JA=60 K/W 2) Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage 1) 2) Value 40 28 Unit A 8 160 80 ±20 m J V I D,pulse E AS V GS T C=25 °C I D=20 A, R GS=25 Ω J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 1.2 page 1 2009-11-12 Free Datasheet http://../ BSZ160N10NS3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R th JA=60 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 63 2.1 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions...