Datasheet Summary
Type
OptiMOSTM3 Power-Transistor
Features
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
BSZ22DN20NS3 G
Product Summary VDS RDS(on),max ID
200 V 225 mW
7A
PG-TSDSON-8
Type BSZ22DN20NS3 G
Package
Marking
PG-TSDSON-8 22DN20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2) Avalanche energy, single pulse
I D,pulse E AS
T C=100...